BYT30G-400 ? october 1999 - ed: 3a high efficiency fast recovery diodes i f(av) 30 a v rrm 400 v trr 50 ns v f 1.4 v main product characteristics very low reverse recovery time very low switching losses low noise turn-off switching smd package features and benefits single rectifier suited for freewheeling in convert- ers and motor control circuits. packaged in d 2 pak, this surface mount device is intended for use in high frequency inverters, free wheeling and polarity protection applications. description 1 2 3 4 1 & 3 4 symbol parameter value unit v rrm repetitive peak reverse voltage 400 v i f(rms) rms forward current 50 a i f(av) average forward current tc=100 c d = 0.5 30 a i fsm surge non repetitive forward current tp=10ms sinusoidal 350 a i frm repetitive peak forward current tp = 5 m s f = 5 khz 280 a tstg tj storage and junction temperature range - 40 to + 150 c absolute maximum ratings d 2 pak (plastic) 1/5
symbol parameter value unit rth (j-c) junction to case 1 c/w thermal resistance symbol parameter test conditions min. typ. max. unit i r * reverse leakage current v r = v rrm t j = 25 c35 m a t j = 100 c6ma v f ** forward voltage drop i f = 30 a t j = 100 c1.4v i f = 30 a t j = 25 c1.5 pulse test : * tp = 5 ms, d < 2 % ** tp = 380 m s, d < 2 % to evaluate the conduction losses use the following equation : p = 1.1 x i f(av) + 0.0095 i f 2 (rms) static electrical characteristics symbol parameter test conditions min. typ. max. unit t rr reverse recovery time t j = 25 c i f = 0.5a irr = 0.25 a i r = 1a 50 ns t j = 25 c i f = 1a di f /dt = -15a/ m s v r = 30v 100 recovery characteristics symbol parameter test conditions min. typ. max. unit t irm maximum reverse recovery time t j = 100 c di f /dt = -120a/ m s 75 ns i f = 30 a di f /dt = -240a/ m s 50 i rm maximum reverse recovery current v cc = 200 v di f /dt = -120a/ m s 9 ns lp < 0.05 m hdi f /dt = -240a/ m s 12 c factor turn-off overvoltage coefficient t j = 100 c i f = i f(av) v cc = 60 v lp = 1 m h di f /dt = -30a/ m s 3.3 / turn-off switching characteristics pin out configuration in d 2 pak: BYT30G-400 2/5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 50 100 150 200 250 300 350 400 450 500 i m(a) p=20w p=30w p=40w t i m =tp/t tp fig.2 : peak current versus form factor. 0.1 1 10 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i fm(a) v fm(v) tj=100 c o fig.3 : forward voltage drop versus forward cur- rent (maximum values). 0.001 0.01 0.1 1 0.1 1 zth(j-c) (tp. ) k= rth(j-c) =0.5 =0.2 =0.1 single pulse tp(s) t =tp/t tp k 0.2 0.5 fig.4 : relative variation of thermal impedance junction to case versus pulse duration. 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 45 50 55 =0.05 =0.1 =0.2 =0.5 t =tp/t tp i f(av)(a) p f(av)(w) =1 fig.1 : average forward power dissipation versus average forward current. 0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30 35 t =tp/t tp =0.5 f(av)(a) i o tamb( c) rth(j-a)=15 c/w o rth(j-a)=rth(j-c) fig.6 : average current versus ambient tempera- ture. ( d : 0.5) 0.001 0.01 0.1 1 0 50 100 150 200 250 im t =0.5 t(s) i m(a) tc=25 c o tc=60 c o tc=100 c o fig.5 : non repetitive surge peak forward current versus overload duration. BYT30G-400 3/5
fig.10 : peak forward voltage versus di f /dt. fig.9 : peak reverse current versus di f /dt. fig.8 : forward recovery times versus di f /dt. fig.7 : reverse recovery charge versus di f /dt. fig.11: dynamic parameters versus junction tem- perature. BYT30G-400 4/5
package mechanical data d 2 pak (plastic) a c2 d r a2 m v2 c a1 g l l3 l2 b b2 e * * flat zone no less than 2mm information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without expres s written ap- proval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 1999 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com ref. dimensions millimeters inches min. max. min. max. a 4.40 4.60 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.70 0.93 0.027 0.037 b2 1.14 1.70 0.045 0.067 c 0.45 0.60 0.017 0.024 c2 1.23 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 e 10.00 10.40 0.393 0.409 g 4.88 5.28 0.192 0.208 l 15.00 15.85 0.590 0.624 l2 1.27 1.40 0.050 0.055 l3 1.40 1.75 0.055 0.069 m 2.40 3.20 0.094 0.126 r 0.40 typ. 0.016 typ. v2 0 8 0 8 foot print (in millimeters) 8.90 3.70 1.30 5.08 16.90 10.30 BYT30G-400 5/5
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